2011. 5. 25 1/8 semiconductor technical data KGT25N120KDA revision no : 0 general description kec npt trench igbts offer low switching losses, high energy efficiency and short circuit ruggedness. it is designed for applications such as motor control, uninterrupted power supplies(ups), general inverters. features h high speed switching h high system efficiency h short circuit withstand times ! 10us h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature characteristic symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 50 a @tc=100 ? 25 a pulsed collector current i cm * 90 a diode continuous forward current @tc=100 ? i f 25 a diode maximum forward current i fm 150 a maximum power dissipation @tc=25 ? p d 310 w @tc=100 ? 125 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r th jc 0.4 ? /w thermal resistance, junction to case (diode) r th jc 2.8 ? /w thermal resistance, junction to ambient r th ja 40 ? /w thermal characteristic g c e e c g + 77 k x 4 k 7 q 6 z wtawyb =yw-bttttbwjb s ywbbttttbw*b s *bwlyttttbwjb s jwbbttttbw*b s *wbbttttbw*b s =w*bttttbw*b s *bw=btttttbwob s bwmbttttbwb* s *wbbttttbw=b s =awobttttbw*b s *wabttttbw*b s ywayttttbwjb s jwmbttttbwjb s jwmbttttbw*b s ow=-ttttbw=b s z 4 x =*j k 7 q 6 h*ao +
2011. 5. 25 2/8 KGT25N120KDA revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1200 - - v collector cut-off current i ces v ge =0v, v ce =1200v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =25ma 4.0 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =25a - 1.95 2.30 v v ge =15v, i c =25a, t c = 125 ? - 2.25 - v v ge =15v, i c =50a - 2.50 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 25a - 200 300 nc gate-emitter charge q ge - 20 - nc gate-collector charge q gc - 80 - nc turn-on delay time t d(on) v cc =600v, i c =25a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 60 - ns rise time t r - 50 - ns turn-off delay time t d(off) - 290 - ns fall time t f - 100 - ns turn-on switching loss e on - 4.1 6.1 mj turn-off switching loss e off - 0.86 1.4 mj total switching loss e ts - 4.96 7.5 mj turn-on delay time t d(on) v cc =600v, i c =25a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 60 - ns rise time t r - 50 - ns turn-off delay time t d(off) - 300 - ns fall time t f - 150 - ns turn-on switching loss e on - 4.3 6.3 mj turn-off switching loss e off - 1.2 2.1 mj total switching loss e ts - 5.5 8.4 mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 3100 - pf ouput capacitance c oes - 100 - pf reverse transfer capacitance c res - 80 - pf short circuit withstand time t sc v cc =600v, v ge =15v, t c =100 ? 10 - - s marking 2 2 device mark 2 3 3 lot no. device mark 1 1 1 kgt 25n120kda 025
2011. 5. 25 3/8 KGT25N120KDA revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 25a t c =25 ? - 1.8 2.5 v t c =125 ? - 1.9 - diode reverse recovery time t rr i f = 25a di/dt = 200a/ s t c =25 ? - 230 330 ns t c =125 ? - 300 - diode peak reverse recovery current i rr t c =25 ? - 27 35 a t c =125 ? - 31 - diode reverse recovery charge q rr t c =25 ? - 3100 4700 nc t c =125 ? - 4650 -
2011. 5. 25 4/8 KGT25N120KDA revision no : 0 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) 45 23 1 0 collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) 0 20 16 12 4 8 08 20 41216 0246810 0 20 40 60 80 100 120 140 160 180 40 20 80 100 60 0 25 50 2.0 1.5 2.5 3.0 75 100 125 case temperature t c ( ) c 1 10 40 capacitance (pf) 0 500 3000 2500 4000 4500 5000 3500 1000 1500 2000 common emitter v ge = 15v t c = t c = fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics 25 c 125 c common emitter v ge = 15v 20v 8v 15v 10v 12v i c = 25a 40a common emitter t c = 25 c i c = 12.5a 25a 40a collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector - emitter voltage v ce (v) 0 20 16 12 4 8 08 20 41216 common emitter t c = 125 c common emitter v ge = 0v, f = 1mhz t c = 25 c i c = 12.5a 25a 40a ciss coss crss t c =25 c common emitter
2011. 5. 25 5/8 KGT25N120KDA revision no : 0 collector current i c ( ) switching time (ns) 020 40 30 50 100 10 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tr td(on) fig 10. turn-on characteristics vs. collector curren t collector current i c ( ) switching time (ns) common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tf td(off) fig 11. turn-off characteristics vs. collector current gate resistance r g ( ? ) switching loss (mj) fig 9. switching loss vs. gate resistance collector current i c ( ) switching loss (mj) 010 30 20 40 50 0.1 10.0 1.0 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c fig 12. switching loss vs. collector current eoff eon eoff eon fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ? ) gate resistance r g ( ? ) switching time (ns) switching time (ns) 0 204060 10 30 50 70 10 100 25 common emitter v cc = 600v, v ge = 15v i c = 25a t c = t c = c 125 c tr td(on) 0204060 10 30 50 70 10 100 1000 25 common emitter v cc = 600v, v ge = 15v i c = 25a t c = t c = c 125 c tf td(off) fig 8. turn-off characteristics vs. gate resistance 0204060 10 30 50 70 0.1 1 10 25 common emitter v cc = 600v, v ge = 15v i c = 25a t c = t c = c 125 c 02040 10 30 50 10 100 1000
2011. 5. 25 6/8 KGT25N120KDA revision no : 0 fig 13. gate charge characteristics gate charge q g ( nc ) gate-emitter voitage v ge (v) 0 80 160 40 120 60 140 20 100 200 180 0 2 4 6 8 10 12 14 16 common emitter r l = 24 ? t c = 25 c turn-off safe operating area v ge = 15v, t c = 125 c fig 14. soa characteristics 1 100 10 1000 1 10 100 fig 15. turn-off soa fig 16. transient thermal impedance of igbt 400v 600v vcc = 200v rectan g ular pulse duration (sec) 10.000 1.000 1e-5 1e-4 1e-3 1e-2 1e-1 1e+00 1e+01 thermal resistance (zthjc) 0.010 0.001 0.100 1. duty factor d=t1/t2 2. peak tj = pdm zthjc + t c t 1 t 2 p dm collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) 1.00 1 0.01 0.10 0.1 10.00 100.00 10 100 1000 1ms 200 s dc operation 50 s single pluse 0.01 0.02 0.1 0.2 0.5 0.05 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature c 10ms
2011. 5. 25 7/8 KGT25N120KDA revision no : 0 fig 17. forward characteristics forward voltage v f (v) forward current i f (a) forward current i f (a) reverse recovery current i rrm (a) reverse recovery time t rr (ns) forward current i f (a) 01020 51525 0 20 25 30 15 5 10 fig 18. reverse recovery current fig 19. reverse recovery time di/dt=100a/ s di/dt=200a/ s 01020 51525 0 400 300 100 200 0 0.4 1.2 1.6 2.0 0.8 2.4 0.1 10 50 1 t c = t c = 25 c 125 c t c = 25 c t c = 125 c di/dt=200a/ s di/dt=100a/ s
2011. 5. 25 8/8 KGT25N120KDA revision no : 0
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